DatasheetsPDF.com

TC58NVG0S3AFT00

Part Number	TC58NVG0S3AFT00
Manufacturer	Toshiba
Description	1 GBit CMOS NAND EPROM
Published	Jul 6, 2005
Detailed Description	www.DataSheet4U.com TC58NVG0S3AFT00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1GBIT (128M u...
Datasheet	TC58NVG0S3AFT00 PDF File

Overview

www.
DataSheet4U.
com TC58NVG0S3AFT00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1GBIT (128M u 8BITS) CMOS NAND E PROM DESCRIPTION The TC58NVG0S3A is a single 3.
3-V 1G-bit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048+64) bytes x 64 pages x 1024 blocks.
The device has a 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments.
The Erase operation is implemented in a single block unit (128 Kbytes + 4Kbytes: 2112 bytes x 64 pages).
The TC58NVG0S3A is a serial-type memory device which utilizes the I/O pins for...

Similar Datasheet

TC58NVG0S3AFT00 1 GBit CMOS NAND EPROM - Toshiba
TC58NVG0S3AFT05 1 GBit CMOS NAND EPROM - Toshiba

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)