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STP12NM50

ST Microelectronics
Part Number STP12NM50
Manufacturer ST Microelectronics
Description N-CHANNEL Power MOSFET
Published Jul 8, 2005
Detailed Description STB12NM50T4, STP12NM50, STP12NM50FP Datasheet N-channel 500 V, 300 mΩ typ., 12 A MDmesh Power MOSFETs in a D²PAK, TO-220...
Datasheet PDF File STP12NM50 PDF File

STP12NM50
STP12NM50

Overview
STB12NM50T4, STP12NM50, STP12NM50FP Datasheet N-channel 500 V, 300 mΩ typ.
, 12 A MDmesh Power MOSFETs in a D²PAK, TO-220 and TO-220FP packages TAB 3 1 D2 PAK TAB 3 2 1 TO-220FP TO-220 1 23 D(2, TAB) Features Order codes VDS STB12NM50T4 STP12NM50 500 V STP12NM50FP • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance RDS(on) max.
350 mΩ Applications • Switching applications ID 12 A G(1) S(3) NG1D2TS3 Description These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout.
These devices offer extremely low onresistance, high dv/dt and excellent avalanche characteristics.
Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
Product status link STB12NM50T4 STP12NM50 STP12NM50FP DS1944 - Rev 12 - October 2020 For further information contact your local STMicroelectronics sales office.
www.
st.
com STB12NM50T4, STP12NM50, STP12NM50FP Electrical ratings 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(2) Drain current pulsed PTOT Total power dissipation at TC = 25 °C VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C) dv/dt(3) Peak diode recovery voltage slope TJ Operating junction temperature range Tstg Storage temperature range 1.
Limited by maximum junction temperature.
2.
Pulse width limited by safe operating area.
3.
ISD ≤ 12 A, di/dt ≤ 400 A/μs, VDD = 80% V(BR)DSS.
Value D²PAK, TO-220 ±30 12 7.
5 48 160 TO-220FP 12(1) 7.
5(1) 48(1) 35 Unit V A A W 2.
5 kV 15 -65 to 150 V/ns °C °C Table 2.
Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case Rth...


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