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2SA1306

Part Number	2SA1306
Manufacturer	Toshiba
Description	Silicon PNP Transistor
Published	Jul 11, 2005
Detailed Description	: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 1 2SA130 2SA1306A I2SA1306B POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPL...
Datasheet	2SA1306 PDF File

Overview

: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 1 2SA130 2SA1306A I2SA1306B POWER AMPLIFIER APPLICATIONS.
DRIVER STAGE AMPLIFIER APPLICATIONS.
FEATURES .
High Transition Frequency : ff=100MHz (Typ.
) .
Complementary to 2SC3298, 2SC3298A, 2S C3298B MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage 2SA1306 2SA1306A 2SA1306B VcBO Collector-Emitter Voltage 2SA1306 2SA1306A 2SA1306B v CEO Emitter-Base Voltage Collector Current VeBO ic Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range IB PC T J T stg RATING -160 -180 -200 -160 -180 -200 -5 -1.
5 -0.
15 20 150 -55-150 UNIT V V V A A W °C °C Unit in iTim 10.
3MAX.
7.
0 #3.
...

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