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IRG4BC30S-S

International Rectifier
Part Number IRG4BC30S-S
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Jul 27, 2005
Detailed Description PD - 94069 IRG4BC30S-S INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: optimized for minimum saturation voltage ...
Datasheet PDF File IRG4BC30S-S PDF File

IRG4BC30S-S
IRG4BC30S-S

Overview
PD - 94069 IRG4BC30S-S INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: optimized for minimum saturation voltage and low operating frequencies (< 1kHz) • Generation 4 IGBT design provides tight parameter distribution and high efficiency C Standard Speed IGBT VCES = 600V G E VCE(on) typ.
= 1.
4V @VGE = 15V, IC = 18A n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions D2Pak Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Coll...


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