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IRG4PC50U

IRF
Part Number IRG4PC50U
Manufacturer IRF
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Aug 2, 2005
Detailed Description PD 91470F IRG4PC50U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-...
Datasheet PDF File IRG4PC50U PDF File

IRG4PC50U
IRG4PC50U

Overview
PD 91470F IRG4PC50U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ.
= 1.
65V @VGE = 15V, IC = 27A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC ...


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