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STD2NB60

ST Microelectronics
Part Number STD2NB60
Manufacturer ST Microelectronics
Description N-CHANNEL MOSFET
Published Aug 10, 2005
Detailed Description STD2NB60 N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET TYPE STD2NB60 s s s s s V DSS 600 V R DS(on) < 3.6 Ω ID 2.6 A...
Datasheet PDF File STD2NB60 PDF File

STD2NB60
STD2NB60

Overview
STD2NB60 N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET TYPE STD2NB60 s s s s s V DSS 600 V R DS(on) < 3.
6 Ω ID 2.
6 A TYPICAL RDS(on) = 3.
3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 2 1 1 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE IPAK TO-251 (Suffix "-1") DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID IDM ( • ) P tot Parameter Drain-source Voltage (V GS = 0) ...


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