DatasheetsPDF.com

STD25NF10

ST Microelectronics
Part Number STD25NF10
Manufacturer ST Microelectronics
Description N-CHANNEL MOSFET
Published Aug 10, 2005
Detailed Description N-CHANNEL 100V - 0.033Ω - 25A DPAK LOW GATE CHARGE STripFET™ POWER MOSFET TYPE STD25NF10 s s s s STD25NF10 VDSS 100 V ...
Datasheet PDF File STD25NF10 PDF File

STD25NF10
STD25NF10

Overview
N-CHANNEL 100V - 0.
033Ω - 25A DPAK LOW GATE CHARGE STripFET™ POWER MOSFET TYPE STD25NF10 s s s s STD25NF10 VDSS 100 V RDS(on) < 0.
038 Ω ID 25 A TYPICAL RDS(on) = 0.
033Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 3 1 DPAK DESCRIPTION This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.
It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application.
It is also intended for any application with low gate charge drive requirements.
INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID (*) ID IDM (l) PTOT dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 100 100 ± 20 25 21 100 100 0.
67 13 480 –55 to 175 (1) I SD ≤35A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX.
(2) Starting T j = 25°C, I D = 12.
5A, VDD = 50V Unit V V V A A A W W/°C V/ns mJ °C (q) Pulse width limited by safe operating area (*) Current Limited by Package May 2002 1/9 STD25NF10 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.
5 100 300 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, T...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)