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STW6NB90

ST Microelectronics
Part Number STW6NB90
Manufacturer ST Microelectronics
Description N-CHANNEL MOSFET
Published Aug 11, 2005
Detailed Description ® STW6NB90 N - CHANNEL 900V - 1.7Ω - 6.3A - TO-247 PowerMESH™ MOSFET PRELIMINARY DATA TYPE STW6NB90 s s s s s V DSS 9...
Datasheet PDF File STW6NB90 PDF File

STW6NB90
STW6NB90

Overview
® STW6NB90 N - CHANNEL 900V - 1.
7Ω - 6.
3A - TO-247 PowerMESH™ MOSFET PRELIMINARY DATA TYPE STW6NB90 s s s s s V DSS 900 V R DS(on) <2Ω ID 6.
3 A TYPICAL RDS(on) = 1.
7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 2 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLIC...


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