DatasheetsPDF.com

MTP60N06HD

Motorola
Part Number MTP60N06HD
Manufacturer Motorola
Description TMOS POWER FET
Published Aug 15, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP60N06HD/D ™ Data Sheet HDTMOS E-FET.™ Power Field Eff...
Datasheet PDF File MTP60N06HD PDF File

MTP60N06HD
MTP60N06HD

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP60N06HD/D ™ Data Sheet HDTMOS E-FET.
™ Power Field Effect Transistor Designer's MTP60N06HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain–to–source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature TMOS POWER FET 60...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)