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IRFS640B

Fairchild
Part Number IRFS640B
Manufacturer Fairchild
Description 200V N-Channel MOSFET
Published Aug 16, 2005
Detailed Description IRF640B/IRFS640B November 2001 IRF640B/IRFS640B 200V N-Channel MOSFET General Description These N-Channel enhancement ...
Datasheet PDF File IRFS640B PDF File

IRFS640B
IRFS640B

Overview
IRF640B/IRFS640B November 2001 IRF640B/IRFS640B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
Features • • • • • • 18A, 200V, RDS(on) = 0.
18Ω @VGS = 10 V Low gate charge ( typical 45 nC) Low Crss ( typical 45 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) IRF640B 200 18 11.
4 72 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) IRFS640B 18 * 11.
4 * 72 * 250 18 13.
9 5.
5 Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 139 1.
11 -55 to +150 300 43 0.
35 * Drain current limited by maximum junction temperature.
Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient IRF640B 0.
9 0.
5 62.
5 IRFS640B 2.
89 -62.
5 Units °C/W °C/W °C/W ©2001 Fairchild Semiconductor Corporation Rev.
A, November 2001 IRF640B/IRFS640B Electrical Characteristics Symbol Parameter TC = 25°C unless ot...


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