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IRFS614B

Fairchild
Part Number IRFS614B
Manufacturer Fairchild
Description 250V N-Channel MOSFET
Published Aug 16, 2005
Detailed Description IRF614B/IRFS614B November 2001 IRF614B/IRFS614B 250V N-Channel MOSFET General Description These N-Channel enhancement ...
Datasheet PDF File IRFS614B PDF File

IRFS614B
IRFS614B

Overview
IRF614B/IRFS614B November 2001 IRF614B/IRFS614B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.
Features • • • • • • 2.
8A, 250V, RDS(on) = 2.
0Ω @VGS = 10 V Low gate charge ( typical 8.
1 nC) Low Crss ( typical 7.
5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Cur...


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