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IRFS630A

Part Number IRFS630A
Manufacturer Fairchild
Title Advanced Power MOSFET
Description Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe...
Features Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.333 Ω (Typ.) 1 IRFS630A BVDSS = 200 V RDS(on) = 0.4 Ω ID = 6.5 A TO-220F 2 3 1.Gate 2. Drain 3. Sou...

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IRFS630 : • IRF630/IRFS630 are N-Channel enhancement mode power MOSFETs with advanced technology. These power MOSFETs are designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. TO-220 • IRF630/IRFS630 are available in TO-220/TO-220F packages. TO-220F Features • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast switching capability Ease of Paralleling Simple Drive Requirements RoHS Compliance and Halogen free Application • DC to DC Converter • Adapter • SMPS Application. TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITF AX (800)-824-8766 (800)-824-8329 (661)-25.

IRFS630 : TO-220F N MOS 。N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features ,,。 Low gate charge, low crss, fast switching. / Applications DC/DC 。 These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. / Equivalent Circuit / Pinning 1 23 PIN1:G PIN 2:D PIN 3:S / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 IRFS630 Rev.D Mar.-2016 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Drain-Source Voltage Drain Current Drain Current Drain Current - Pulsed Gate-Source Voltage Avalanche Current Single Pulsed Avalanche Energy Repetitive Avalanche Energy Power Dissipation Operating.

IRFS630 : .

IRFS630A : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 200 V ±30 V 6.5 A 36 A 38 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 3.33 62.5 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn IN.

IRFS630B : These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. Features • • • • • • 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 22 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS T.




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