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IRFSL9N60A

IRF
Part Number IRFSL9N60A
Manufacturer IRF
Description SMPS MOSFET
Published Aug 16, 2005
Detailed Description PD - 91814A SMPS MOSFET IRFSL9N60A HEXFET® Power MOSFET Applications Switch Mode Power Supply ( SMPS ) l Uninterrupta...
Datasheet PDF File IRFSL9N60A PDF File

IRFSL9N60A
IRFSL9N60A

Overview
PD - 91814A SMPS MOSFET IRFSL9N60A HEXFET® Power MOSFET Applications Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l This device is only for through hole application.
l VDSS 600V Rds(on) max 0.
75Ω ID 9.
2A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current Absolute Maximum Ratings l G DS T O -26 2 Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
9.
2 5.
8 37 170 1.
3 ± 30 5.
0 -55 to + 150 300 (1.
6mm from case ) Units A W W/°C V V/ns °C Applicable Off Line SMPS Topologies: l l Active Clamped Forward Main Switch Notes  through … are on page 8 www.
irf.
com 1 12/23/98 IRFSL9N60A Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min.
Typ.
Max.
Units Conditions 600 ––– ––– V V GS = 0V, ID = 250µA ––– ––– 0.
75 Ω VGS = 10V, ID = 5.
5A „ 2.
0 ––– 4.
0 V VDS = VGS, ID = 250µA ––– ––– 25 VDS = 600V, VGS = 0V µA ––– ––– 250 VDS = 480V, VGS = 0V, TJ = 150°C ––– ––– 100 VGS = 30V nA ––– ––– -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff.
Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Outpu...


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