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IRHM9160

IRF
Part Number IRHM9160
Manufacturer IRF
Description POWER MOSFET
Published Aug 16, 2005
Detailed Description Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1415 REPETITIVE AVALANCHE AND dv/dt RATED H...
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IRHM9160
IRHM9160

Overview
Previous Datasheet Index Next Data Sheet Provisional Data Sheet No.
PD-9.
1415 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR -100 Volt, 0.
087Ω , RAD HARD HEXFET International Rectifier’s P-channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si).
Under identical pre- and post-radiation test conditions, International Rectifier’s P-channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose.
No compensation in gate drive circuitry is required.
These devices are also capable of surviving transient ionization pulses as high as 1 x ...


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