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IRHM7C50SE

IRF
Part Number IRHM7C50SE
Manufacturer IRF
Description TRANSISTOR N-CHANNEL
Published Aug 16, 2005
Detailed Description Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1252B REPETITIVE AVALANCHE AND dv/dt RATED ...
Datasheet PDF File IRHM7C50SE PDF File

IRHM7C50SE
IRHM7C50SE

Overview
Previous Datasheet Index Next Data Sheet Provisional Data Sheet No.
PD-9.
1252B REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR ® IRHM2C50SE IRHM7C50SE N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD 600Volt, 0.
60Ω, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure.
Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose.
No compensation in gate drive circuitry is required.
These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds.
Since the SEE process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the well-established advantage...


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