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IXFH32N50 Datasheet PDF


Part Number IXFH32N50
Manufacturer IXYS
Title HiPerFET Power MOSFETs
Description HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFT 30N50 IXFH/IXFT 32N50 500 V 500 V ID25 30...
Features 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 1.13/10 6



• Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 0.102 2 -0.206 ±100 TJ = 25°C TJ = 125°C 200 1 0.15 0.16 4 V %/K V %/K nA mA mA W W International standard packag...

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Datasheet IXFH32N50 PDF File








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IXFH32N50Q : www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class IXFH 32N50Q IXFT 32N50Q VDSS ID25 RDS(on) 500 V 32 A 0.16 Ω 500 V 32 A 0.16 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C; pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 500 500 ±20 ±30 32 128 32 45 1500 5 416 -55 ... + 150 150 -55 ... + 150 V V V V A A A mJ mJ V/ns W °C °C °C °C Nm/lb.in. g g TO-247 AD (IXFH) (TAB) TO-268 (D.




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