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IRG4PF50WD

IRF
Part Number IRG4PF50WD
Manufacturer IRF
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Aug 17, 2005
Detailed Description PD- 91788 IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Optimized for use ...
Datasheet PDF File IRG4PF50WD PDF File

IRG4PF50WD
IRG4PF50WD

Overview
PD- 91788 IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest technology IGBT design offers tighter parameter distribution coupled with exceptional reliability • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package C VCES = 900V G E VCE(on) typ.
= 2.
25V @VGE = 15V, IC = 28A n-cha n ne l Benefits • Lower switching losses a...


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