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STP60N06-14

ST Microelectronics
Part Number STP60N06-14
Manufacturer ST Microelectronics
Description N-CHANNEL Power MOSFET
Published Aug 19, 2005
Detailed Description STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP60N05-14 STP60N06-14 ...
Datasheet PDF File STP60N06-14 PDF File

STP60N06-14
STP60N06-14

Overview
STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP60N05-14 STP60N06-14 V DSS 50 V 60 V R DS(on) < 0.
014 Ω < 0.
014 Ω ID 60 A 60 A s s s s s s s s s TYPICAL RDS(on) = 0.
012 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE VERY LOW RDS (on) APPLICATION ORIENTED CHARACTERIZATION 3 1 2 TO-220 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.
) s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM ( • ) P tot V ISO T stg Tj Parameter Drain-Source Voltage (V gs = 0) Drain-Gate Voltage (R gs = 20 K Ω ) Gate-Source Voltage Drain-Current (continuous) at T c = 25 o C Drain-Current (continuous) at T c = 100 C Drain-Current (Pulsed) Total D...


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