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STP60N05-14

ST Microelectronics
Part Number STP60N05-14
Manufacturer ST Microelectronics
Description N-CHANNEL Power MOSFET
Published Aug 19, 2005
Detailed Description STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP60N05-14 STP60N06-14 ...
Datasheet PDF File STP60N05-14 PDF File

STP60N05-14
STP60N05-14

Overview
STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP60N05-14 STP60N06-14 V DSS 50 V 60 V R DS(on) < 0.
014 Ω < 0.
014 Ω ID 60 A 60 A s s s s s s s s s TYPICAL RDS(on) = 0.
012 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE VERY LOW RDS (on) APPLICATION ORIENTED CHARACTERIZATION 3 1 2 TO-220 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.
) s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM ( • ) P tot V ISO T stg Tj Parameter Drain-Source Voltage (V gs = 0) Drain-Gate Voltage (R gs = 20 K Ω ) Gate-Source Voltage Drain-Current (continuous) at T c = 25 o C Drain-Current (continuous) at T c = 100 C Drain-Current (Pulsed) Total Dissipation at T c = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max Operating Junction Temperature o o Value STP60N05-14 50 50 ± 20 60 50 240 150 1 -65 to 175 175 STP60N06-14 60 60 Unit V V V A A A W/ o C o C C C V o o (•)Pulse width limited by safe operating area March 1996 1/5 STP60N05-14/STP60N06-14 THERMAL DATA R thj-case R thj-amb R thj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 1 62.
5 0.
5 300 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symbol I AR E AS EAR I AR Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR , V DD = 25 V) Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) Max Value 6...


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