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IRG4PH40UD2-EP

IRF
Part Number IRG4PH40UD2-EP
Manufacturer IRF
Description Insulated Gate Bipolar Transistor
Published Aug 19, 2005
Detailed Description PD - 95239 IRG4PH40UD2-EP • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGB...
Datasheet PDF File IRG4PH40UD2-EP PDF File

IRG4PH40UD2-EP
IRG4PH40UD2-EP


Overview
PD - 95239 IRG4PH40UD2-EP • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in resonant circuits • Industry standard TO-247AD package with extended leads • Lead-Free Features INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast CoPack IGBT VCES = 1200V G E VCE(on) typ.
= 2.
43V @VGE = 15V, IC = 21A Benefits n-channel Applications • Higher switching frequency capability than competitive IGBTs • Highest efficiency available • HEXFRED diodes optimized for performance with IGBTs.
Minimized recovery characteristics require less / no snubbing • Induction cooking systems • Microwave Ovens • Resonant Circuits TO-247AD Parameter Max.
1200 41 21 82 82 10 40 ±20 160 65 -55 to +150 300 (0.
063 in.
(1.
6mm) from case) 10 lbf in (1.
1N m) Absolute Maximum Ratings Units V A Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current Clamped Inductive Load current VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ Tc = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Ù d Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Storage Temperature Range, for 10 sec.
Mounting Torque, 6-32 or M3 screw V W °C y y Thermal / Mechanical Characteristics Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case- IGBT Junction-to-Case- Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min.
––– ––– ––– ––– ––– Typ.
––– ––– 0.
24 ––– 6 (0.
21) Max.
0.
77 2.
5 ––– 40 ––– Units °C/W g (oz.
) www.
irf.
com 1 7/27/04 IRG4PH40UD2-EP Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Collector-to-Emitter Breakdown Voltage V(BR)CES V(BR)ECS Emitter-to-Collector Breakdown Voltage ∆V(BR)CE...


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