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MRF1000MB

Tyco
Part Number MRF1000MB
Manufacturer Tyco
Description Microwave Pulse Power Transistors
Published Aug 21, 2005
Detailed Description SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1000MB/D The RF Line Microwave Pulse Power Transistors Designe...
Datasheet PDF File MRF1000MB PDF File

MRF1000MB
MRF1000MB

Overview
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1000MB/D The RF Line Microwave Pulse Power Transistors Designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems.
• Guaranteed Performance @ 1090 MHz, 18 Vdc — Class A Output Power = 0.
2 Watt Minimum Gain = 10 dB • 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Industry Standard Package • Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Internal Input Matching for Broadband Operation MRF1000MB 0.
7 W, 960–1215 MHz CLASS A/AB MICROWAVE POWER TRANSISTORS NPN SILICON MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 20 50 3.
5 200 7.
0 40 –65 to +150 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C CASE 332A–03, STYLE 2 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) Symbol RθJC Max 25 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.
) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 5.
0 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 5.
0 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 5.
0 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 1.
0 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO 20 50 50 3.
5 — — — — — — — — — — 0.
5 Vdc Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 5.
0 Vdc) hFE 10 — 100 — 1.
These devices are designed for RF operation.
The total device dissipation rating applies only when the device is operated as RF amplifiers.
2.
Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
Replaces MRF100...


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