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IRGPH30MD2

IRF
Part Number IRGPH30MD2
Manufacturer IRF
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Aug 23, 2005
Detailed Description Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1115 IRGPH30MD2 INSULATED GATE BIPOLAR TRANSI...
Datasheet PDF File IRGPH30MD2 PDF File

IRGPH30MD2
IRGPH30MD2

Overview
Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.
1115 IRGPH30MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency ( 1 to 10kHz) C Short Circuit Rated Fast CoPack IGBT VCES = 1200V VCE(sat) ≤ 3.
5V G @VGE = 15V, IC = 9.
0A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line.
They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a h...


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