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IRGPF20F

IRF
Part Number IRGPF20F
Manufacturer IRF
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Aug 23, 2005
Detailed Description Previous Datasheet Index Next Data Sheet PD - 9.1025 IRGPF20F INSULATED GATE BIPOLAR TRANSISTOR Features • Switching...
Datasheet PDF File IRGPF20F PDF File

IRGPF20F
IRGPF20F

Overview
Previous Datasheet Index Next Data Sheet PD - 9.
1025 IRGPF20F INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig.
1 for Current vs.
Frequency curve G E C Fast Speed IGBT VCES = 900V VCE(sat) ≤ 4.
3V @VGE = 15V, I C = 5.
3A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO-247AC Absolute...


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