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IRGPH50F

IRF
Part Number IRGPH50F
Manufacturer IRF
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Aug 23, 2005
Detailed Description Previous Datasheet Index Next Data Sheet PD - 9.761A IRGPH50F INSULATED GATE BIPOLAR TRANSISTOR Features • Switching...
Datasheet PDF File IRGPH50F PDF File

IRGPH50F
IRGPH50F

Overview
...-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig.
1 for Current vs.
Frequency curve G E C Fast Speed IGBT VCES = 1200V VCE(sat) ≤ 2.
9V @VGE = 15V, I C = 25A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TS...


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