DatasheetsPDF.com

IRGPH40S

Part Number	IRGPH40S
Manufacturer	IRF
Description	INSULATED GATE BIPOLAR TRANSISTOR
Published	Aug 23, 2005
Detailed Description	Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1085 IRGPH40S INSULATED GATE BIPOLAR TRANSIST...
Datasheet	IRGPH40S PDF File

Overview

Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.
1085 IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation (to 400Hz) C Standard Speed IGBT VCES = 1200V G E VCE(sat) ≤ 3.
0V @VGE = 15V, IC = 20A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO-247AC Absolute Maximum Ratings Par...

Similar Datasheet

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)