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PM150RSE120 PM150RSE120
FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE
PM150RSE120
FEATURE
a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. b) Using new Diode which is designed to get soft reverse recovery characteristics. • 3φ 150A, 1200V Current-sense IGBT for 15kHz switching • 50A, 1200V Current-sense regenerative brake IGBT • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage • Acoustic noise-less 30kW class inverter application
APPLICATION General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
Dimensions in mm
135 ±1 120. 5 ±0. 5 0. 5 ±0. 3 39. 7 LABEL 4- φ5. 5 MOUNTING HOLES
11
24. 1
Terminal code 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. VUPC UP VUP1 VVPC VP VVP1 VWPC WP VWP1 VNC 11. 12. 13. 14. 15. 16. VN1 Br UN VN WN FO
16. 5
1 23
456
789
11 13 15 10 12 14 16
3. 22
20 P
10. 16
10. 16
10. 16
39. 5
10. 5 φ2. 54 U 51. 5 A 2-φ2. 54 V 26 1613
95. 5 ±0. 5 110 ±1
2-2. 54 2-2. 54 2-2. 54 6-2. 54 67. 4 74. 4
20
W 3. 22 4-R6 6-M5 NUTS Screwing depth Min9. 0
2-2. 54 0. 64
26 0. 64
11. 6
33. 7 34. 7
24. 1 –0. 5 4
+1. 0
21. 3
A : DETAIL
10. 6
5
N B PPS
Sep. 2001
MITSUBISHI
PM150RSE120
FLAT-BASE TYPE INSULATED PACKAGE
INTERNAL FUNCTIONS BLOCK DIAGRAM
Rfo=1. 5kΩ
Br Fo VNC W N VN1 VN UN VWPC
WP
VWP1 VVPC
VP
VVP1 VUPC
UP
VUP1
Rfo
Gnd In
Fo Vcc
Gnd In
Fo Vcc Gnd In
Fo Vcc
Gnd In
Fo Vcc
Gnd In
Vcc
Gnd In
Vcc Gnd In
Vcc
Gnd
Si Out
Gnd
Si Out
Gnd
TEMP Si Out
Gnd
Si Out
Gnd
Si Out
Gnd
Si Out
Gnd
Si Out
Th
B
N
W
V
U
P
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART
Symbol VCES ±IC ±ICP PC Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature Condition VD...
PM150RSE120 PDF File
