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PM150RSE060 PM150RSE060
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PM150RSE060
FEATURE
a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. For example, typical VCE(sat)=1. 7V b) Using new Diode which is designed to get soft reverse recovery characteristics. • 3φ 150A, 600V Current-sense IGBT for 15kHz switching • 50A, 600V Current-sense regenerative brake IGBT • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage • Acoustic noise-les...
PM150RSE060 PDF File
