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STS1NC60

ST Microelectronics
Part Number STS1NC60
Manufacturer ST Microelectronics
Description N-CHANNEL PowerMESH MOSFET
Published Aug 25, 2005
Detailed Description N-CHANNEL 600V - 12Ω - 0.3A - SO-8 PowerMESH™II MOSFET TYPE STS1NC60 s s s s s STS1NC60 VDSS 600 V RDS(on) < 15 Ω ID...
Datasheet PDF File STS1NC60 PDF File

STS1NC60
STS1NC60

Overview
N-CHANNEL 600V - 12Ω - 0.
3A - SO-8 PowerMESH™II MOSFET TYPE STS1NC60 s s s s s STS1NC60 VDSS 600 V RDS(on) < 15 Ω ID 0.
3 A TYPICAL RDS(on) = 12Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED SO-8 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.
The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
INTERNAL SCHEMATIC DIAGRAM APPLICATIONS AC ADAPTORS AND BATTERY CHARGERS s SWITH MODE POWER SUPPLIES (SMPS) s ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q ) PTOT dv/dt (1) Tstg Tj .
Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery volt...


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