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STS12NF30L

Part Number	STS12NF30L
Manufacturer	ST Microelectronics
Description	N-CHANNEL PowerMESH MOSFET
Published	Aug 25, 2005
Detailed Description	® STS12NF30L N - CHANNEL 30V - 0.0085Ω - 12A SO-8 STripFET™ POWER MOSFET TYPE STS12NF30L s s V DSS 30 V R DS(on) < 0...
Datasheet	STS12NF30L PDF File

Overview

® STS12NF30L N - CHANNEL 30V - 0.
0085Ω - 12A SO-8 STripFET™ POWER MOSFET TYPE STS12NF30L s s V DSS 30 V R DS(on) < 0.
01 Ω ID 12 A s TYPICAL RDS(on) = 0.
0085 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique ” Single Feature Size™ ” strip-based process.
The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS s DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN PORTABLE/DESKTOP PCs SO-8 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR V GS ID Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C o o Value 30 30 ± 20 12 7.
5 48 2.
5 Un it V V V A A A W I DM ( • ) P tot (•) Pulse width limited by safe operating area May 1999 1/8 STS12NF30L THERMAL DATA R thj -amb Tj Ts tg (*)Thermal Resistance Junction-ambient Maximum Operating Junction T emperature Storage Temperature 50 150 -55 to 150 o C/W o C o C (*) Mounted on FR-4 board (t ≤ 10sec) ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µ A V GS = 0 Min.
30 1 10 ± 100 Typ.
Max.
Unit V µA µA nA V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) V GS = ± 20 V T c = 125 oC ON (∗) Symbo l V GS(th) R DS(on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10 V V GS = 4.
5 V Test Con ditions ID = 250 µ A ID = 6 A ID = 6 A 12 Min.
1 Typ.
1.
6 0.
0...

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STS12NF30L N-CHANNEL PowerMESH MOSFET - ST Microelectronics

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