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IXDN55N120

IXYS Corporation
Part Number IXDN55N120
Manufacturer IXYS Corporation
Description High Voltage IGBT with optional Diode
Published Aug 27, 2005
Detailed Description High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA IXDN 55N120 VCES = 1200 V = 100 A IXDN ...
Datasheet PDF File IXDN55N120 PDF File

IXDN55N120
IXDN55N120

Overview
High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA IXDN 55N120 VCES = 1200 V = 100 A IXDN 55N120 D1 IC25 VCE(sat) typ = 2.
3 V C G G C miniBLOC, SOT-227 B E153432 G E E IXDN 55N120 E IXDN 55N120 D1 C E = Emitter x, G = Gate, C = Collector E = Emitter x E Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC VISOL TJ Tstg Md Weight Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp = 1 ms VGE = ±15 V, TJ = 125°C, RG = 22 W Clamped inductive load, L = 30 µH VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 22 W, non repetitive TC = 25°C IGBT Diode Maximum Ratings 1200 1200 ±20 ±30 100 62 124 ICM = 100 VCEK < VCES 10 450 220 2500 -40 .
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+150 -40 .
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+150 V V V V A A A A µs W W V~ °C °C x Either Emitter terminal can be used as Main or Kelvin Emitter Features q q q q q q 50/60 Hz; IISOL £ 1 mA q q q NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latc...


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