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STD16NE06L-1

ST Microelectronics
Part Number STD16NE06L-1
Manufacturer ST Microelectronics
Description N-CHANNEL POWER MOSFET
Published Aug 28, 2005
Detailed Description ® STD16NE06L-1 N - CHANNEL 60V - 0.07 Ω - 16A - TO-251 STripFET™ " POWER MOSFET PRELIMINARY DATA TYPE STD16NE06L-1 s s...
Datasheet PDF File STD16NE06L-1 PDF File

STD16NE06L-1
STD16NE06L-1

Overview
® STD16NE06L-1 N - CHANNEL 60V - 0.
07 Ω - 16A - TO-251 STripFET™ " POWER MOSFET PRELIMINARY DATA TYPE STD16NE06L-1 s s s s s V DSS 60 V R DS(on) < 0.
085 Ω ID 16 A TYPICAL RDS(on) = 0.
07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION 1 3 2 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™ " strip-based process.
The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS DPAK TO-251 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID IDM ( • ) P tot dv/dt T stg Tj July 1998 Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
Operating Junction Temperature o o Value 60 60 ± 20 16 11 64 40 0.
3 7 -65 to 175 175 (1) ISD ≤16 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W/ o C V/ns o o C C 1/5 (•) Pulse width limited by safe operating area ST16NE06L1 THERMAL DATA R thj-case Rthj-amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 3.
75 100 1.
5 275 C/W oC/W o C/W o C o AVALANCHE CHARACTERISTICS Symbol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , VDD = 35 V) Max Value 16 60 Unit A mJ ELECTRICAL CH...


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