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STD100NH02L

ST Microelectronics
Part Number STD100NH02L
Manufacturer ST Microelectronics
Description N-CHANNEL POWER MOSFET
Published Aug 28, 2005
Detailed Description N-CHANNEL 24V - 0.0042 Ω - 60A DPAK/IPAK STripFET™ III POWER MOSFET TYPE STD100NH02L s s s s s s s STD100NH02L VDSS 24...
Datasheet PDF File STD100NH02L PDF File

STD100NH02L
STD100NH02L

Overview
N-CHANNEL 24V - 0.
0042 Ω - 60A DPAK/IPAK STripFET™ III POWER MOSFET TYPE STD100NH02L s s s s s s s STD100NH02L VDSS 24 V RDS(on) < 0.
0048 Ω ID 60 A(2) s TYPICAL RDS(on) = 0.
0042 Ω @ 10 V TYPICAL RDS(on) = 0.
005 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4") 3 2 1 IPAK TO-251 (Suffix “-1”) DPAK TO-252 (Suffix “T4”) 3 1 DESCRIPTION The STD100NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology.
This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved.
INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTES ABSOLUTE MAXIMUM RATINGS Symbol Vspike(1) VDS VDGR VGS ID(2) ID(2) IDM(3) Ptot EAS (4) Tstg Tj Parameter Drain-source Voltage Rating Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max.
Operating Junction Temperature Value 30 24 24 ± 20 60 60 240 100 0.
67 800 -55 to 175 Unit V V V V A A A W W/°C mJ °C September 2003 1/12 STD100NH02L THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 1.
5 100 275 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 25 mA, VGS = 0 VDS = 20 V VDS = 20 V VGS = ± 20V Min.
24 1 10 ±100 Typ.
Max.
Unit V µA µA nA TC = 125°C ON (5) Symbol VGS(th) ...


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