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MTD3302

Motorola
Part Number MTD3302
Manufacturer Motorola
Description SINGLE TMOS POWER MOSFET 30 VOLTS RDS
Published Sep 3, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD3302/D Product Preview WaveFET™ Power Surface Mount P...
Datasheet PDF File MTD3302 PDF File

MTD3302
MTD3302

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD3302/D Product Preview WaveFET™ Power Surface Mount Products MTD3302 ™ HDTMOS Single N-Channel Field Effect Transistor WaveFET™ devices are an advanced series of power MOSFETs which utilize Motorola’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area.
They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time.
WaveFET™ devices are designed for use in low voltage, high speed switching applications where power efficiency is important.
Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones.
They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.
The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
• Characterized Over a Wide Range of Power Ratings • Ultralow RDS(on) Provides Higher Efficiency and Extends Battery Life in Portable Applications • Logic Level Gate Drive — Can Be Driven by Logic ICs • Diode Is Characterized for Use In Bridge Circuits • Diode Exhibits High Speed, With Soft Recovery • IDSS Specified at Elevated Temperature • Avalanche Energy Specified • Industry Standard DPAK Surface Mount Package D SINGLE TMOS POWER MOSFET 30 VOLTS RDS(on) = 10 mW CASE 369A– 13, Style 2 DPAK G S MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Drain–to–Source Voltage Drain–to–Gate Voltage Gate–to–Source Voltage Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, L = 126 mH, IL(pk) = 3.
0 A, VDS = 30 Vdc) Symbol VDSS VDGR VGS TJ, Tstg EAS Value 30 30 ± 20 – 55 to 150 500 Unit Vdc Vd...


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