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50N02-09

Part Number	50N02-09
Manufacturer	Vishay Siliconix
Description	SUB50N02-09
Published	Sep 6, 2005
Detailed Description	SUD50N02-09P Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.0095...
Datasheet	50N02-09 PDF File

Overview

SUD50N02-09P Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.
0095 @ VGS = 10 V 0.
017 @ VGS = 4.
5 V ID (A)a 20 15 D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency 100% Rg Tested APPLICATIONS D High-Side Synchronous Buck DC/DC Conversion − Desktop − Server www.
DataSheet4U.
com D TO-252 Drain Connected to Tab G D S G Top View S N-Channel MOSFET Ordering Information: SUD50N02-09P SUD50N02-09P—E3 (Lead Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.
1 0 1 mH TA = 25_C TC = 25_C TA = 25_C TC= 100_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 20 "20 20 14 100 4.
3 29 42 6.
5a 39.
5 −55 to 175 ...

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50N02-09 SUB50N02-09 - Vishay Siliconix

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