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MRF6P27160HR6

Freescale Semiconductor
Part Number MRF6P27160HR6
Manufacturer Freescale Semiconductor
Description RF Power Field Effect Transistor
Published Sep 12, 2005
Detailed Description Freescale Semiconductor Technical Data MRF6P27160H Rev. 0, 1/2005 RF Power Field Effect Transistor N - Channel Enhanc...
Datasheet PDF File MRF6P27160HR6 PDF File

MRF6P27160HR6
MRF6P27160HR6

Overview
Freescale Semiconductor Technical Data MRF6P27160H Rev.
0, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for N - CDMA base station applications with frequencies from 2600 to 2700 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s .
To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications.
• Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 2 x 900 mA, Pout = 35 Watts Avg.
, Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.
2288 MHz.
Peak/Avg.
= 9.
8 dB @ 0.
01% Probability on CCDF.
Power Gain — 14.
6 dB Drain Efficiency — 22.
6% ACPR @ 885 kHz Offset — - 47.
8 dBc @ 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2700 MHz, 160 Watts CW Output Power • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched, Controlled Q, for Ease of Use • Qualified ...


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