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MTB29N15E

Motorola
Part Number MTB29N15E
Manufacturer Motorola
Description TMOS POWER FET
Published Sep 13, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB29N15E/D Product Preview TMOS E-FET.™ Power Field Ef...
Datasheet PDF File MTB29N15E PDF File

MTB29N15E
MTB29N15E

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB29N15E/D Product Preview TMOS E-FET.
™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain–to–source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalan...


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