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MTB23P06V

Motorola
Part Number MTB23P06V
Manufacturer Motorola
Description TMOS POWER FET
Published Sep 13, 2005
Detailed Description MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTB23P06V/D TMOS Power Field Effect Transisto...
Datasheet PDF File MTB23P06V PDF File

MTB23P06V
MTB23P06V

Overview
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTB23P06V/D TMOS Power Field Effect Transistor D2PAK for Surface Mount TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs.
This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices.
Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes.
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating saf...


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