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MTB60N06HD

Motorola
Part Number MTB60N06HD
Manufacturer Motorola
Description TMOS POWER FET
Published Sep 13, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB60N06HD/D ™ Data Sheet HDTMOS E-FET.™ High Energy Pow...
Datasheet PDF File MTB60N06HD PDF File

MTB60N06HD
MTB60N06HD

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB60N06HD/D ™ Data Sheet HDTMOS E-FET.
™ High Energy Power FET D2PAK for Surface Mount Designer's MTB60N06HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities.
This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes.
This new energy efficient design also offers a drain–to–source diode with a fast recovery ...


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