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MTB4N80E

Motorola
Part Number MTB4N80E
Manufacturer Motorola
Description TMOS POWER FET
Published Sep 13, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB4N80E/D ™ Data Sheet TMOS E-FET.™ High Energy Power F...
Datasheet PDF File MTB4N80E PDF File

MTB4N80E
MTB4N80E

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB4N80E/D ™ Data Sheet TMOS E-FET.
™ High Energy Power FET D2PAK for Surface Mount Designer's MTB4N80E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities.
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time.
In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain–to–source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for ...


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