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SD1542-42

ST Microelectronics
Part Number SD1542-42
Manufacturer ST Microelectronics
Description RF & MICROWAVE TRANSISTORS
Published Sep 14, 2005
Detailed Description SD1542-42 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . . DESIGNED FOR HIGH POWER PULSED IFF 600 WATTS ...
Datasheet PDF File SD1542-42 PDF File

SD1542-42
SD1542-42

Overview
SD1542-42 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .
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DESIGNED FOR HIGH POWER PULSED IFF 600 WATTS (min.
) IFF 1030 or 1090 MHz REFRACTORY GOLD METALLIZATION 6.
0 dB MIN.
GAIN LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS 30:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS INPUT MATCHED, COMMON BASE CONFIGURATION .
400 x .
500 2LFL (M112) hermetically sealed ORDER CO DE SD1542-42 BRANDING SD1542-42 PIN CONNECTION DESCRIPTION The SD1542-42 is a hermetically sealed, gold metallized, silicon NPN power transistor.
The SD154242 is designed for applications requiring high peak power and low duty cycles such as IFF.
The SD1542-42 is packaged in a hermetic metal/ceramic package with internal input matching, resulting in improved broadband performance and low thermal resistance.
1.
Collector 2.
Base 3.
Emitter 4.
Base ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Valu e Un it VCC IC PDISS TJ T STG Collector-Supply Voltage* Device Current* Power Dissipation* Junction Temperature Storage Temperature (TC ≤ 100°C) 55 45 1670 +200 − 65 to +200 V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.
06 °C/W * Applies only to rated RF operation.
June 14, 1995 1/4 SD1542-42 ELECTRICAL SPECIFICATIONS (T case = 25 °C) STATIC Symbo l T est Co nditions Value Min .
T yp.
Max.
Unit BVCBO BVCER BVEBO ICES hFE IC = 25 mA IC = 25 mA IE = 10 mA VCE = 50 V VCE = 5 V IE = 0 mA RBE = 10 Ω IC = 0 mA VBE = 0 V IC = 2 A 65 65 3.
5 — 10 — — — — — — — — 60 250 V V V mA — DYNAMIC Symbo l Test Cond ition s Valu e Min.
T yp.
Max.
Un it POUT ηC GP Note: f = 1090 MHz f = 1090 MHz f = 1090 MHz = 10 µ S ec, Duty Cycle PIN = 150 W PIN = 150 W PIN = 150 W = 1% VCC = 50 V VCC = 50 V VCC = 50 V 600 35 6.
0 680 40 6.
6 — — — W % dB Pul se Wi dth TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT 900 800 PO W ERO UTPUT (W atts) 700 600 500 400 300 200 0 60 A -T est Circuit B - 1030M Hz Circuit A B POWER OUTPUT vs FREQUENCY 800 7...


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