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SD1530-7

Advanced Semiconductor
Part Number SD1530-7
Manufacturer Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Published Sep 14, 2005
Detailed Description ASI SD1530-7 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1530-7 is a Common Base Device Designed for DME, I...
Datasheet PDF File SD1530-7 PDF File

SD1530-7
SD1530-7

Overview
ASI SD1530-7 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1530-7 is a Common Base Device Designed for DME, IFF and Tacan Pulse Applications.
FEATURES INCLUDE: • Gold Metalization • Input Matching • Broad Band Performance PACKAGE STYLE 250 2L FLG (A) MAXIMUM RATINGS IC VCES PDISS TJ T STG θ JC 2.
5 A 55 V 125 W @ TC = 25 OC -55 OC to +200 OC -55 OC to +200 OC 1.
4 C/W O 1 = COLLECTOR 2 = EMITTER 3 = BASE CHARACTERISTICS SYMBOL BV CES BV EBO hFE PG ηC IC = 75 mA IE = 25 mA VCE = 5.
0 V VCC = 50 V TC = 25 OC TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 55 4.
0 UNITS V V --- IC = 300 mA Pout = 25 W fo = 960 to 1215 MHz DUTY CYCLE = 1.
0% 10 8.
5 10 45 PULSE WIDTH = 10 µS dB % A D ...


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