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2SK2976

Sanyo Semicon Device
Part Number 2SK2976
Manufacturer Sanyo Semicon Device
Description N-Channel MOSFET
Published Sep 15, 2005
Detailed Description Ordering number:ENN6003 N-Channel Silicon MOSFET 2SK2976 DC-DC Converter Applications Features · Low ON resistance. · ...
Datasheet PDF File 2SK2976 PDF File

2SK2976
2SK2976

Overview
Ordering number:ENN6003 N-Channel Silicon MOSFET 2SK2976 DC-DC Converter Applications Features · Low ON resistance.
· 4V drive.
Package Dimensions unit:mm 2083B [2SK2976] 6.
5 5.
0 4 1.
5 2.
3 0.
5 0.
85 0.
7 0.
8 1.
6 1.
2 7.
5 0.
5 1 2 3 0.
6 5.
5 7.
0 2.
3 2.
3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP 2092B [2SK2976] 6.
5 5.
0 4 2.
3 1.
5 0.
5 5.
5 7.
0 0.
85 1 0.
6 0.
5 0.
8 2 3 2.
5 1.
2 0 to 0.
2 1.
2 2.
3 2.
3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.
,Ltd.
Semiconductor Company TOKYO OFFICE Tokyo Bldg.
, 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31000TS (KOTO) TA-2139 No.
6003–1/4 2SK2976 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25˚C Conditions Ratings 30 ±20 15 45 1 20 150 –55 to +150 Unit V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain...


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