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MV1807J1

Advanced Semiconductor
Part Number MV1807J1
Manufacturer Advanced Semiconductor
Description SILICON VARACTOR DIODE
Published Sep 22, 2005
Detailed Description MV1807J1 SILICON VARACTOR DIODE DESCRIPTION: The ASI MV1807J1 is a Diffused Epitaxial Varactor Diode Designed for Mult...
Datasheet PDF File MV1807J1 PDF File

MV1807J1
MV1807J1

Overview
MV1807J1 SILICON VARACTOR DIODE DESCRIPTION: The ASI MV1807J1 is a Diffused Epitaxial Varactor Diode Designed for Multiplier Applications.
PACKAGE STYLE DO-4 MAXIMUM RATINGS I V PDISS TJ TSTG θJC O O 100 mA 80 V 21 W @ TC = 25 C -65 C to +150 C -65 C to +175 C 6.
0 C/W O O O O Cathode to case CHARACTERISTICS SYMBOL VB CT RS FOUT POUT FIN PIN IR = 10 µA VR = 6.
0 V VR = 6.
0 V TC = 25 C O NONE TEST CONDITIONS f = 1.
0 MHz f = 50 MHz MINIMUM 80 10.
8 TYPICAL MAXIMUM 13.
2 UNITS V pF Ohms MHz W MHz W 0.
25 1000 25.
1 500 37.
0 A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice.
REV.
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