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UPA2781GR

NEC
Part Number UPA2781GR
Manufacturer NEC
Description SWITCHING N- AND P-CHANNEL POWER MOS FET
Published Sep 22, 2005
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2781GR SWITCHING N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE DESCRIPTI...
Datasheet PDF File UPA2781GR PDF File

UPA2781GR
UPA2781GR

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2781GR SWITCHING N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE DESCRIPTION The µPA2781GR is N-channel Power MOSFET, which built a Schottky Barrier Diode inside.
This product is designed for synchronous DC/DC converter application.
PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain FEATURES • Built a Schottky Barrier Diode • Low on-state resistance RDS(on)1 = 7.
6 mΩ TYP.
(VGS = 10 V, ID = 7 A) RDS(on)2 = 11.
3 mΩ TYP.
(VGS = 4.
5 V, ID = 7 A) RDS(on)3 = 12.
9 mΩ TYP.
(VGS = 4.
0 V, ID = 7 A) • Low Ciss: Ciss = 900 pF TYP.
• Small and surface mount package (Power SOP8) 1 4 5.
37 MAX.
+0.
10 –0.
05 6.
0 ±0.
3 4.
4 0.
8 1.
8 MAX.
1.
44 0.
15 0.
05 MIN.
0.
5 ±0.
2 0.
10 1.
27 0.
78 MAX.
0.
40 +0.
10 –0.
05 0.
12 M ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 µPA2781GR EQUIVALENT CIRCUIT Drain ABSOLUTE MAXIMUM RATINGS (TA = 25°C.
All terminals are connected.
) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS =...


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