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APM2512N

Anpec Electronics Coropration
Part Number APM2512N
Manufacturer Anpec Electronics Coropration
Description N-Channel MOSFET
Published Sep 23, 2005
Detailed Description APM2512N N-Channel Enhancement Mode MOSFET Features • • • • 25V/40A , RDS(ON)=9mΩ(typ.) @ VGS=10V RDS(ON)=13mΩ(typ.) @ ...
Datasheet PDF File APM2512N PDF File

APM2512N
APM2512N

Overview
APM2512N N-Channel Enhancement Mode MOSFET Features • • • • 25V/40A , RDS(ON)=9mΩ(typ.
) @ VGS=10V RDS(ON)=13mΩ(typ.
) @ VGS=4.
5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged TO-252 Package Pin Description 1 2 3 G D S Top View of TO-252 D Applications • Power Management in Computer, Portable Equipment and Battery Powered Systems.
G S N-Channel MOSFET Ordering and Marking Information APM2512N Lead Free Code Handling Code Temp.
Range Package Code Package Code U : TO-252 Operation Junction Temp.
Range C :-55 to 150 C ° Handling Code TR : Tape & Reel L : Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code APM2512N U : APM2512N XXXXX Absolute Maximum Ratings Symbol VDSS VGSS  Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating 25 ±20 Unit V ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev.
A.
1 - Oct.
, 2003 1 www.
anpec.
com.
tw APM2512N Absolute Maximum Ratings (Cont.
) Symbol ID IDM PD TJ,TSTG * RθJA (TC= 25°C unless otherwise noted) Rating 40 90 50 20 -55 to 150 50 2.
5 °C °C/W A W Unit Parameter Maximum Drain Current – Continuous Maximum Pulsed Drain Current ( pulse width ≤ 300µs) Tc=25°C Maximum Power Dissipation Tc=100°C Maximum Operating and Storage Junction Temperature Thermal Resistance – Junction to Ambient Thermal Resistance – Junction to Case 2 RθJC  * Mounted on 1in pad area of PCB.
Electrical Characteristics Symbol Static BV DSS IDSS V GS(th) IGSS R DS(ON) V SD a b a (TA = 25°C unless otherwise noted) APM2512N Typ.
Max.
Parameter Test Condition Min.
Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage V GS =0V , IDS=250 µA V DS...


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