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PMEG6010AED

NXP
Part Number PMEG6010AED
Manufacturer NXP
Description Low VF (MEGA) Schottky barrier diode
Published Sep 24, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET age M3D302 PMEG6010AED Low VF (MEGA) Schottky barrier diode Product specification 2...
Datasheet PDF File PMEG6010AED PDF File

PMEG6010AED
PMEG6010AED

Overview
DISCRETE SEMICONDUCTORS DATA SHEET age M3D302 PMEG6010AED Low VF (MEGA) Schottky barrier diode Product specification 2003 Jun 27 Philips Semiconductors Product specification Low VF (MEGA) Schottky barrier diode FEATURES • Low switching losses • Very high surge current absorption capability • Fast recovery time • Guard ring protected • Plastic SMD package.
APPLICATIONS • Low power switched-mode power supplies • Rectification • Polarity protection.
handbook, halfpage 6 PMEG6010AED PINNING PIN 1 2 3 4 5 6 cathode cathode anode anode cathode cathode DESCRIPTION 5 4 GENERAL DESCRIPTION Planar Schottky barrier diode encapsulated in a SOT457 (SC-74) small plastic package.
1 2 3 MHC634 1, ...


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