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PNA1601M

Panasonic Semiconductor
Part Number PNA1601M
Manufacturer Panasonic Semiconductor
Description Silicon NPN Phototransistor
Published Sep 24, 2005
Detailed Description Phototransistors PNA1601M (PN166) Silicon NPN Phototransistor For optical control systems Features High sensitivity Wid...
Datasheet PDF File PNA1601M PDF File

PNA1601M
PNA1601M

Overview
Phototransistors PNA1601M (PN166) Silicon NPN Phototransistor For optical control systems Features High sensitivity Wide spectral sensitivity, suited for detecting various kinds of LEDs 12.
5±1.
0 0.
8 0.
5 max.
Gate the rest Unit : mm 2.
6±0.
2 C0.
5 0.
8 R0.
55 1.
4±0.
2 1.
2±0.
2 (0.
4) 2.
0 0.
7 2.
5±0.
2 1.
7 Ultraminiature, thin side-view type package 2-0.
7 2-0.
45 0.
15 2 1 2.
0 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO IC PC Topr Tstg Ratings 20 20 50 –25 to +65 –30 to +85 Unit V mA mW ˚C ˚C 1: Collector 2: Emitter Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Sensitivity to infrared emitters Peak sensitivity wavelength Acceptance half angle Rise time Fall time Collector saturation voltage *1 *2 Symbol ICEO SIR θ tr*2 tf*2 VCE(sat) *1 Conditions VCE = 10V VCE = 10V, H = VCE = 10V Measured from the optical axis to the half po...


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