DatasheetsPDF.com

SUP90P06-09L

Vishay Siliconix
Part Number SUP90P06-09L
Manufacturer Vishay Siliconix
Description P-Channel MOSFET
Published Sep 24, 2005
Detailed Description SUP90P06-09L New Product Vishay Siliconix P-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) −60 FEATURES D Tr...
Datasheet PDF File SUP90P06-09L PDF File

SUP90P06-09L
SUP90P06-09L

Overview
SUP90P06-09L New Product Vishay Siliconix P-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) −60 FEATURES D TrenchFETr Power MOSFET ID (A)c −90 −90 rDS(on) (W) 0.
0093 @ VGS = −10 V 0.
0118 @ VGS = −4.
5 V APPLICATIONS D DC/DC Primary Switch D Automotive − 12-V Boardnet − High-Side Switches − Motor Drives TO-220AB S G DRAIN connected to TAB G D S Top View Ordering Information: SUP90P06-09L—E3 D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currentc (TJ = 175_C) Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energya Power Dissipation Operating Junction and Storage Temperature Range L = 0.
1 0 1 mH TC = 25_C TA = 25_C TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAS EAS PD TJ, Tstg Limit −60 "20 −90 −67 −200 −65 211 250b 2.
4 −55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Free Air Junction-to-Case Notes: a.
Duty cycle v 1%.
b.
See SOA curve for voltage derating.
c.
Limited by package.
Document Number: 73010 S-41203—Rev.
A, 21-Jun-04 www.
vishay.
com Symbol RthJA RthJC Limit 62 0.
6 Unit _C/W 1 SUP90P06-09L Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = −250 mA VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "20 V VDS = −60 V, VGS = 0 V Zero Gate Voltage g Drain Current On-State Drain Currenta IDSS ID(on) VDS = −60 V, VGS = 0 V, TJ = 125_C VDS = −60 V, VGS = 0 V, TJ = 175_C VDS = −5 V, VGS = −10 V VGS = −10 V, ID = −30 A Drain Source On-State Drain-Source On State Resistancea rDS(on) DS( ) VGS = −10 V, ID = −30 A, TJ = 125_C VGS = −10 V, ID = −30 A, TJ = 175_C VGS = −4.
5 V, ID = −20 A Forward Transconductancea gfs VDS = −15 V, ID = −30 A 20 0.
0094 −120 0.
0074 0.
0093 0.
0150 0.
0190 0.
0118 S W −60 −1 −3 "100 −1 −50 −250 A mA m V nA Symbol Test Condition...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)