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SUP85N10-10

Vishay Siliconix
Part Number SUP85N10-10
Manufacturer Vishay Siliconix
Description N-Channel MOSFET
Published Sep 24, 2005
Detailed Description SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 10...
Datasheet PDF File SUP85N10-10 PDF File

SUP85N10-10
SUP85N10-10

Overview
SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 0.
0105 at VGS = 10 V 0.
012 at VGS = 4.
5 V TO-220AB ID (A) 85a FEATURES • TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC TO-263 D DRAIN connected to TAB GD S Top View SUP85N10-10 ORDERING INFORMATION Package TO-220AB TO-263 G DS Top View SUB85N10-10 G S N-Channel MOSFET Lead (Pb)-free SUP85N10-10-E3 SUB85N10-10-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 125 °C ID IDM Avalanche Current Single Pulse Avalanche Energyb L = 0.
1 mH IAS EAS Maximum Power Dissipationb TC = 25 °C (TO-220AB and TO-263) TA = 25 °C (TO-263)d Operating Junction and Storage Temperature Range PD TJ, Tstg Limit 100 ± 20 85a 60a 240 75 280 250c 3.
75 - 55 to 175...


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