DatasheetsPDF.com

FQD3N50C

Fairchild Semiconductor
Part Number FQD3N50C
Manufacturer Fairchild Semiconductor
Description 500V N-Channel MOSFET
Published Sep 24, 2005
Detailed Description FQD3N50C/FQU3N50C 500V N-Channel MOSFET QFET FQD3N50C/FQU3N50C 500V N-Channel MOSFET Features • 2.5 A, 500 V, RDS(on) =...
Datasheet PDF File FQD3N50C PDF File

FQD3N50C
FQD3N50C

Overview
FQD3N50C/FQU3N50C 500V N-Channel MOSFET QFET FQD3N50C/FQU3N50C 500V N-Channel MOSFET Features • 2.
5 A, 500 V, RDS(on) = 2.
5 Ω @ VGS = 10 V • Low gate charge ( typical 10 nC ) • Low Crss ( typical 8.
5 pF) • Fast switching • 100 % avalanche tested • Improved dv/dt capability ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
D D { ● ◀ G S D-PAK FQD Series I-PAK G D S FQU Series G{ ▲ ● ● { S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Current Drain Current Parameter Drain-Source Voltage - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FQD3N50C/FQU3N50C 500 2.
5 1.
5 10 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 200 2.
5 3.
5 4.
5 35 0.
28 -55 to +150 300 Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient Typ ---- Max 3.
5 50 110 Units °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2005 Fairchild Semiconductor Corporation 1 www.
fairchildsemi.
com FQD3N50C/FQU3N50C Rev.
A FQD3N50C/FQU3N50C 500V N-Channel MOSFET Package Marking and Ordering Informat...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)